| 摘要 |
Angle of incidence measurements along an axis of ion implantation are obtained by employing positive and negative slot structures. The positive slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of an ion beam having a selected range of angles in a positive direction. The negative slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of the ion beam having the selected range of angles in a negative direction. A first beam measurement mechanism measures beam current of the positive portion to obtain a positive angle beam current measurement. A second beam measurement mechanism measures beam current of the negative portion to obtain a negative angle beam current measurement. An analyzer component employs the positive angle beam current measurement and the negative angle beam current measurement to determine a measured angle of incidence. |
