| 摘要 |
The embodiment of the present invention relates to a light emitting device, a manufacturing method thereof, a light emitting device package, and a lighting system. The light emitting device according to the embodiment of the present invention includes: a first conductive semiconductor layer (112); a GaN superlattice layer (124) which is formed on the first conductive semiconductor layer (112); an active layer (114) which is formed on the GaN superlattice layer (124); and a second conductive semiconductor layer (116) which is formed on the active layer (114). The GaN superlattice layer (124) includes an undoped GaN superlattice layer (124u) on the first conductive semiconductor layer (112) and a doped GaN superlattice layer (124d) on the undoped GaN superlattice layer (124u). |
