| 摘要 |
<p>#CMT# #/CMT# The method involves producing etching solution having pH ranging between 3 and 6, from hydrofluoric acid, ammonia and acetic acid, hydrogen peroxide. Zones of a layer of silicon-germanium (2) are exposed to pretreatment solution. The layer of silicon-germanium on a level of the zones is removed by exposure with the etching solution. The solution is diluted in deionized water between 5 and 500 times, at exposure time lying between 20 seconds and 600 seconds. The zones of the layer of silicon-germanium are exposed to a post-processing solution after removal of the layer. #CMT#USE : #/CMT# Method for manufacturing a semiconductor device e.g. complementary metal oxide semiconductor (MOS) transistor of an integrated circuit, by chemical etching using wet process. #CMT#ADVANTAGE : #/CMT# The layer of silicon-germanium on the level of the zones is removed, by exposure with the etching solution produced with the pH range of 3 and 6, with better selectivity with respect to other layers of the transistor and without damaging a resin mask. The zones of the layer of silicon-germanium are exposed to the post-processing solution after removal of the layer, thus improving surface quality of the layer located under the zones of removal by removing possible contaminants such as silicon oxides or silicon-germanium oxides. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic sectional view of a substrate in which PMOS and NMOS transistors are formed. 1 : Silicon substrate 2 : Layer of silicon-germanium 3 : Silicon oxide layer 4 : Gate 5 : Spacers.</p> |
