| 摘要 |
Disclosed is a cleaning method for metallic or silicon wafers (1), which is characterized by: containing a pretreating step for improving a wafer surface; containing a water-repellent protective film formation step, in which a chemical solution for forming the water-repellent protective film containing a water-repellent protective film formation agent for forming the water-repellent protective film (10) on the improved wafer surface is retained in at least the recesses (4) of the wafer, and the water-repellent protective film (10) is formed on the recess surfaces; and by the water-repellent protective film formation agent being a silicon compound represented by R1 aSiX4-a. This method improves the cleaning step susceptible to causing pattern collapse. |
