| 摘要 |
An apparatus for selectively improving integrated circuit performance is provided. In an example, an integrated circuit is fabricated according to an integrated circuit layout. A critical portion of the integrated circuit layout determines a speed of the integrated circuit, where at least a part of the critical portion includes at least one of a halo implant region, lightly doped drain (LDD) implant region, and source drain extension (SDE) implant region. A marker layer comprises the part of the critical portion that includes the at least one of the halo implant region, the lightly doped drain (LDD) implant region, and the source drain extension (SDE) implant region, and includes at least one transistor formed therefrom. |
