METHOD FOR GROWING &bgr;-Ga2O3 SINGLE CRYSTAL

摘要

Provided is a method for growing a &bgr;-Ga2O3 single crystal, which enables the production of a plate-like &bgr;-Ga2O3 single crystal having high crystal quality. In one embodiment, a method for growing a &bgr;-Ga2O3 single crystal employing an EFG method is provided, said method comprising the steps of: bringing a plate-like seed crystal (20) into contact with a Ga2O3 melt (12), wherein the plate-like seed crystal (20) comprises a &bgr;-Ga2O3 single crystal having a defect density of 5 × 105 /cm2 or less in the whole region; and pulling up the seed crystal (20) to grow a &bgr;-Ga2O3 single crystal (25).