ENHANCED CAPTURE PADS FOR THROUGH SEMICONDUCTOR VIAS

摘要

Method of forming a capture pad on a semiconductor substrate. The method includes providing a semiconductor substrate [300] having an active side and an inactive side and having a plurality of unfilled TSVs extending between the active side and the inactive side; filling the TSVs [304] with a metal such that the metal is recessed [316] with respect to at least one of the active side and the inactive side and does not entirely fill the TSVs; defining capture pad areas [314] on the at least one of the active side and inactive side adjacent to the recessed TSVs; filling the capture pad areas and recessed TSVs with the same metal to form a capture pad [308] in direct contact with each of the TSVs, each of the capture pads having an all metal portion that follows an outline of each of the TSVs. Also disclosed is a semiconductor substrate having a capture pad.