发明名称 ELECTRO-OPTIC DEVICE, METHOD FOR MANUFACTURING ELECTRO-OPTIC DEVICE, AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide an electro-optic device in which film thickness of an insulating film formed above a pixel electrode can be decreased and reduction in an effective voltage applied to a liquid crystal layer between the pixel electrode and a counter electrode can be suppressed.SOLUTION: An electro-optic device includes: a TFT 30; a first insulating film 44 which is disposed above the TFT and has a contact hole 86 formed therein; a reflective pixel electrode 9 which covers a part of a surface of the first insulating film and covers a bottom surface and a side wall of the contact hole, has a recessed part 90 at a position corresponding to the contact hole, and is electrically connected to the TFT; and a second insulating film 47 which covers the pixel electrode and has a cavity 95 at least partially located within the recessed part. The contact hole is approximately rectangular or elliptical as a planar shape. The film thickness of the pixel electrode covering the side wall of the contact hole increases from the bottom surface of the contact hole toward the surface of the first insulating film.
申请公布号 JP2014089380(A) 申请公布日期 2014.05.15
申请号 JP20120240000 申请日期 2012.10.31
申请人 SEIKO EPSON CORP 发明人 IZAWA SHOTARO
分类号 G09F9/30;G02F1/1335;G02F1/1343;G02F1/1368;G09F9/00 主分类号 G09F9/30
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