DEFECTIVE EVALUATION METHOD FOR EUV MASK AND MANUFACTURING METHOD FOR EUV MASK

摘要

PROBLEM TO BE SOLVED: To make UV mask manufacture efficient by acquiring an optimum pattern layout before patterning of an EUV mask and then reducing a correcting operation for a part having a phase defect.SOLUTION: A defective evaluation method for an EUV mask includes the steps of: acquiring position information on a phase defect and luminance profile information for an EUV blank; measuring an outermost surface of the phase defect in three dimensions; estimating an internal state of the phase defect through simulation; temporarily determining a pattern layout in which the phase defect is positioned under an absorption layer pattern; calculating a transfer pattern by carrying out exposure simulation using a three-dimensional shape and a propagation parameter of the phase defect with respect to the temporarily determined pattern layout; determining the pattern layout by evaluating a phase defect part of the transfer pattern calculated through the exposure simulation; and generating the EUV mask.