发明名称 CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR USE
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for forming a crystal semiconductor layer on a substrate for a photovoltaic element for a solar cell which is improved in efficiency of photovoltaic power generation and reduced in cost.SOLUTION: A semiconductor layer is formed through vapor-phase deposition. A pulse laser fusion/recrystallization process is carried out to convert the semiconductor layer into a crystal layer. Pulses of a laser or other electromagnetic radiation are generated in pulse trains 120-120and distributed uniformly over treatment zones, and successive adjacent treatment zones are exposed to the pulse trains 120-120to progressively convert a deposited material into a crystal material.
申请公布号 JP2014088310(A) 申请公布日期 2014.05.15
申请号 JP20130240886 申请日期 2013.11.21
申请人 APPLIED MATERIALS INC 发明人 STEPHEN MOFFATT
分类号 C30B13/24;H01L21/20;H01L21/268;H01L31/04;H01L33/16 主分类号 C30B13/24
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