| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a crystal that may make a crystal to be grown on an underside of a seed crystal long by growing the crystal using a carbon-containing silicon solution to which gallium and germanium are added.SOLUTION: In the method for growing a crystal according to the present invention in which a carbon-containing silicon solution 6 is charged in a crucible 2 and a crystal of silicon carbide is grown on an underside 3B of a seed crystal 3 by contacting the underside 3B of the seed crystal 3 to the solution 6 and then pulling up the seed crystal 3, gallium and germanium are added to the solution 6 before pulling up the seed crystal 3. |
