| 摘要 |
<p>PROBLEM TO BE SOLVED: To deposit a homogeneous thin film having excellent film quality over the film thickness direction, when laminating a reaction product and depositing a thin film by relatively rotating reaction gas supply means supplying reaction gas for a table mounting a substrate.SOLUTION: After performing a deposition-modification step consisting of a deposition processing for depositing a silicon oxide film by adsorbing an Si-containing gas onto a wafer W by rotating a turntable 2, and then supplying O3 gas to the surface of the wafer W thereby causing reaction of the Si-containing gas adsorbed to the surface of the wafer W, and a modification processing for modifying the silicon oxide film by using plasma, supply of the Si-containing gas is stopped and modification step of silicon oxide is performed using plasma.</p> |
