发明名称 Novel Photonic Device Structure And Fabrication Method Thereof
摘要 Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser.
申请公布号 US2014133508(A1) 申请公布日期 2014.05.15
申请号 US201314079318 申请日期 2013.11.13
申请人 SIFOTONICS TECHNOLOGIES CO., LTD. 发明人 HUANG MENGYUAN;WANG LIANGBO;CHEN WANG;HONG CHING-YIN;PAN DONG
分类号 H01S5/20;H01L31/0232;H01L31/18 主分类号 H01S5/20
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