发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR LAYOUT PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device includes providing a substrate having a mask layer formed thereon, providing a first photomask having a first layout pattern and a second photomask having a second layout pattern, the first layout pattern including a plurality of active area portions and at least a neck portion connecting two adjacent active area portions, transferring the first layout pattern from the first photomask to the mask layer to form a plurality of active area patterns and at least a neck pattern connecting two adjacent active area patterns in the mask layer, and transferring the second layout pattern from the second photomask to the mask layer to remove the neck pattern to form a patterned mask. The patterned mask includes the active area patterns. A slot is at least formed between the two adjacent active area patterns.
申请公布号 US2014131832(A1) 申请公布日期 2014.05.15
申请号 US201213674965 申请日期 2012.11.13
申请人 UNITED MICROELECTRONICS CORP. 发明人 YANG YU-SHIANG;WANG CHENG-TE
分类号 H01L21/02;H01L29/02 主分类号 H01L21/02
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