| 摘要 |
According to the present invention, a molybden alloy layer and an indium oxide layer etchant composition comprises hydrogen peroxide, a fluorid compound, a compound having a sulfonic acid group, an anticorrosive agent, an auxiliary oxidizing agent, a peroxide stabilizer, and water. The etching speed of the molybden alloy layer and the indium oxide layer is maintained, and the etching speed of SiNx which is a lower insulating layer of a pixel electrode is reduced. Therefore, failure due to irregular coating is reduced when an alignment layer is coated which is a post-process. |
