| 摘要 |
PROBLEM TO BE SOLVED: To suppress hillock generation at an ohmic electrode.SOLUTION: A method for manufacturing a semiconductor device comprises: a step for forming an ohmic electrode 20 containing an Al film on a surface of a nitride semiconductor layer 18; a step for forming an insulation film 26 so as to cover the ohmic electrode; a step for forming an opening 52 exposing the ohmic electrode on the first insulation film; a step for forming a wiring layer 30 connected to the ohmic electrode in the opening; and a step for forming a first metal film 38 containing at least one of Ta, Mo, Pd, Ni, Ti so as to cover the wiring layer on the ohmic electrode. A distance between the whole of inner edge of the opening and an edge of the first metal film is equal to or less than 1 μm. |
