发明名称 APPARATUS AND METHOD FOR SENSING TRANSISTOR AGING EFFECTS
摘要 An integrated circuit implements a transistor aging effects sensor comprising first and second delay lines, each comprising a plurality of delay elements, and a register. The register comprises a plurality of flip-flops having data inputs driven by respective outputs of respective ones of the delay elements of the first delay line and clock inputs driven by one or more clock signals provided by at least one of the delay elements of the second delay line. Data outputs of the flip-flops of the register are indicative of one or more aging effects in transistors of the first and second delay lines. For example, the register may comprise a thermometer encoded register providing digital output signals used to determine aging effects in the transistors of the first and second delay lines. Embodiments can be implemented using differential delay lines or delay lines comprising respective inverter chains.
申请公布号 US2014136128(A1) 申请公布日期 2014.05.15
申请号 US201213673730 申请日期 2012.11.09
申请人 LSI CORPORATION 发明人 CHLIPALA JAMES D.;BUONPANE MICHAEL S.;SEGAN SCOTT A.;MARTIN RICHARD P.;MUSCAVAGE RICHARD
分类号 G01R31/26;G06F19/00 主分类号 G01R31/26
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