| 摘要 |
Methods include sequentially forming a first mold film, a first support film, a second mold film, and a second support film on a substrate, forming a contact hole through the second support film, the second mold film, the first support film and the first mold film, forming an electrode in the contact hole, and removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode. |
