MOLYBDENUM SUBSTRATES FOR CIGS PHOTOVOLTAIC DEVICES
摘要
Photovoltaic (PV) devices and solution-based methods of making the same are described. The PV devices include a CIGS-type absorber layer formed on a molybdenum substrate. The molybdenum substrate includes a layer of low- density molybdenum proximate to the absorber layer. The presence of low- density molybdenum proximate to the absorber layer has been found to promote the growth of large grains of CIGS-type semiconductor material in the absorber layer.
申请公布号
WO2014072833(A2)
申请公布日期
2014.05.15
申请号
WO2013IB03106
申请日期
2013.11.08
申请人
NANOCO TECHNOLOGIES, LTD.
发明人
IWAHASHI, TAKASHI;LIN, JUN;WHITELEGG, STEPHEN;LIU, ZUGANG;ALLEN, CARY;STUBBS, STUART;KIRKHAM, PAUL