SILICON SINGLE CRYSTAL PRODUCTION METHOD, SILICON SINGLE CRYSTAL WAFER PRODUCTION METHOD, AND SILICON SINGLE CRYSTAL WAFER

摘要

Provided is a silicon single crystal production method for producing silicon single crystals in which FPD and LEP are not detected by growing a silicon single crystal that has a nitrogen concentration [N] of 1x1013-5x1015 (/cm3) inclusive and an oxygen concentration [Oi] of 9.2x1017 (atoms/cm3 ASTM'79) or less under growth conditions satisfying 0.17≰V/G≰-1.85x10-19x[Oi]+0.36, where V denotes the growth speed and G denotes the temperature gradient in the vicinity of the crystal growth interface. Thus, it is possible to provide a method for production of silicon single crystals by the Czochralski method, which enables the production, at high productivity and high yield, of silicon single crystals suitable for an epitaxial substrate or the like, and suitable as an advanced semi-conductor device material, by imparting superior characteristics with regard to defects, slip resistance, and the inhibition of oxygen donor generation.