发明名称 |
NANOPILLAR FIELD-EFFECT AND JUNCTION TRANSISTORS |
摘要 |
<p>Methods for fabrication of nanopillar field effect transistors are described. These transistors can have high height-to-width aspect ratios and be CMOS compatible. Silicon nitride may be used as a masking material. These transistors have a variety of applications, for example they can be used for molecular sensing if the nanopillar has a functionalized layer contacted to the gate electrode. The functional layer can bind molecules, causing an electrical signal in the transistor.</p> |
申请公布号 |
WO2014074180(A1) |
申请公布日期 |
2014.05.15 |
申请号 |
WO2013US50355 |
申请日期 |
2013.07.12 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
CHANG, CHIEH-FENG;RAJAGOPAL, ADITYA;SCHERER, AXEL |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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