| 摘要 |
The present invention relates to a method for manufacturing bismuth telluride thermoelectric materials, that includes a step of peeling Bi2Te3 compounds of laminating structure by layer, a step of performing reduction reaction to the peeled Bi2Te3 compounds by using a hydrazine hydrate, and a step of sintering the Bi2Te3 compounds by using a spark plasma sintering method. By the invention, grain growth is suppressed, a high-density sintering body having few vesicles and very close gaps between particles is formed, thermal conductivity is reduced through a peeling process by the grainboundary scattering of phonon, and thermoelectric performance is improved. |
