METHOD FOR RESIST STRIP IN PRESENCE OF REGULAR LOW K AND/OR POROUS LOW K DIELECTRIC MATERIALS

摘要

PROBLEM TO BE SOLVED: To provide a method for avoiding situations of damage to a low k dielectric material present on a substrate while providing a high strip rate and excellent across-wafer uniformity, without faceting a hardmask material.SOLUTION: A substrate includes a low k dielectric material 207 underlying a photoresist material 201 and a polymer film 213 overlying both the photoresist material and the low k dielectric material. A first step of a two-step process uses oxygen plasma to remove the polymer film. A second step of the two-step process uses ammonia plasma to remove the photoresist material, where the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is defined by particular values for process parameters including chemicals, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.