发明名称 SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR FABRICATING PROCESS FOR THE SAME
摘要 A semiconductor structure and a fabricating process for the same are provided. The semiconductor fabricating process includes providing a first dielectric layer, a transitional layer formed on the first dielectric layer, and a conductive fill penetrated through the transitional layer and into the first dielectric layer; removing the transitional layer; and forming a second dielectric layer over the conductive fill and the first dielectric layer.
申请公布号 US2014131883(A1) 申请公布日期 2014.05.15
申请号 US201213674887 申请日期 2012.11.12
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUANG TSUNG-MIN;LEE CHUNG-JU
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
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