发明名称 |
SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR FABRICATING PROCESS FOR THE SAME |
摘要 |
A semiconductor structure and a fabricating process for the same are provided. The semiconductor fabricating process includes providing a first dielectric layer, a transitional layer formed on the first dielectric layer, and a conductive fill penetrated through the transitional layer and into the first dielectric layer; removing the transitional layer; and forming a second dielectric layer over the conductive fill and the first dielectric layer. |
申请公布号 |
US2014131883(A1) |
申请公布日期 |
2014.05.15 |
申请号 |
US201213674887 |
申请日期 |
2012.11.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG TSUNG-MIN;LEE CHUNG-JU |
分类号 |
H01L21/768;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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