ION IMPLANTATION EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To improve uniformity of a beam current distribution having a singular point at which a value of a beam current is prominently different from others.SOLUTION: Ion implantation equipment in which ions are implanted to an entire surface of a substrate 8 by using a ribbon-like ion beam 3 generated in an ion source 1 and the substrate 8 is moved in a direction crossing the ion beam 3, includes at least one deflection member 6 in an ion beam transport path between the ion source 1 and the substrate 8. A center position in a long-side direction of the ion beam 3 is moved on a surface of the substrate 8 during the ion implantation processing to the substrate 8.