发明名称 Integrated Magnatoresistive Sensing device
摘要 An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface.
申请公布号 US2014132250(A1) 申请公布日期 2014.05.15
申请号 US201313773560 申请日期 2013.02.21
申请人 VOLTAFIELD TECHNOLOGY CORP. 发明人 LEE CHIEN-MIN;FU NAI-CHUNG;CHEN KUANG-CHING
分类号 G01R35/00 主分类号 G01R35/00
代理机构 代理人
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