发明名称 |
Integrated Magnatoresistive Sensing device |
摘要 |
An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface. |
申请公布号 |
US2014132250(A1) |
申请公布日期 |
2014.05.15 |
申请号 |
US201313773560 |
申请日期 |
2013.02.21 |
申请人 |
VOLTAFIELD TECHNOLOGY CORP. |
发明人 |
LEE CHIEN-MIN;FU NAI-CHUNG;CHEN KUANG-CHING |
分类号 |
G01R35/00 |
主分类号 |
G01R35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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