| 摘要 |
Provided are a semiconductor device and a manufacturing method therefor. The method comprises: forming on a substrate (1000) a first semiconductor layer (1002) and a second semiconductor layer (1004) in sequence; patterning the second semiconductor layer (1004) and the first semiconductor layer (1002), so as to form an initial fin; selectively etching the first semiconductor layer (1002) in the initial fin, so as to enable same to form transverse indentation; filling a dielectric in the transverse indentation, so as to form a body side wall (1012); forming on the substrate (1000) an isolation layer, the isolation layer exposing a part of the body side wall (1012), thereby limiting the fin located above the isolation layer; and forming above the isolation layer a gate stack across the fin. |
