| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an inspection device capable of estimating a defect on a mask and the degree of a ripple effect of the defect on a wafer and effectively performing defect determination processing.SOLUTION: An inspection device 100 determines whether or not there is a defect by radiating light on a photomask 101 that is a sample with a pattern formed thereon and obtaining an image of the photomask 101 through an optical system on a photodiode array 105 that is an image sensor. The inspection device 100 includes: a comparator circuit 108 for determining a defect by comparing the optical image with a reference image; a comparator circuit 301 for determining a defect by comparing transferred images with each other; and a review unit 500 for reviewing information from the comparator circuits 108 and 301. In the review unit 500, one with a larger pattern density value is reviewed preferentially between the pattern density in one direction of the pattern and the pattern density in a direction orthogonal to the one direction.</p> |
