| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce deterioration in heat radiation characteristics and reduce a peeling amount of an ohmic electrode.SOLUTION: A nitride semiconductor laser element 11 comprises: a laser structure 13 including a substrate 17 and a semiconductor region 19 on a semi-polar principal surface 17a of the substrate 17; and an ohmic electrode 45 and a pad electrode 47 which lie on the semiconductor region 19. The laser structure 13 has a first end face 27 and a second end face 29 for a laser resonator. The ohmic electrode 45 extends in a first direction. The pad electrode 47 lies away from an edge 27e and includes first through third parts 47a, 47b, 47c which are sequentially arranged along a second direction. The second part 47b is provided on the ohmic electrode 45 and protrudes more in the first direction than the first and third parts 47a, 47c. The ohmic electrode 45 protrudes more in the first direction than the second part 47b. A distance D21 between one end 47h of the second part 47b and the edge 27e of the first end face 27 is 10μm or below.</p> |
