发明名称 Methods for Fabricating Integrated Passive Devices on Glass Substrates
摘要 A method includes forming a plurality of dielectric layers over a semiconductor substrate; and forming integrated passive devices in the plurality of dielectric layers. The semiconductor substrate is then removed from the plurality of dielectric layers. A dielectric substrate is bonded onto the plurality of dielectric layers.
申请公布号 US2014134801(A1) 申请公布日期 2014.05.15
申请号 US201414157287 申请日期 2014.01.16
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN WEN-CHAO;MAO MING-RAY;YANG SHIH-HSIEN;TSAI KUAN-CHI
分类号 H01L23/00 主分类号 H01L23/00
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