发明名称 |
Patterned Layer Design for Group III Nitride Layer Growth |
摘要 |
A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. |
申请公布号 |
US2014134773(A1) |
申请公布日期 |
2014.05.15 |
申请号 |
US201213647902 |
申请日期 |
2012.10.09 |
申请人 |
SENSOR ELECTRONIC TECHNOLOGY, INC.;SENSOR ELECTRONIC TECHNOLOGY, INC. |
发明人 |
JAIN RAKESH;SUN WENHONG;YANG JINWEI;SHATALOV MAXIM S.;DOBRINSKY ALEXANDER;SHUR MICHAEL;GASKA REMIGIJUS |
分类号 |
H01L33/12 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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