SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

Disclosed are a semiconductor device and a method for manufacturing the semiconductor device. The method comprises: forming in a semiconductor substrate (101) a first MOSFET (100) with a first gate length; and forming in the semiconductor substrate (101) a second MOSFET with a second gate length, wherein the second gage length is less than the first gage length, and wherein the second MOSFET has a gate stack in the form of a side wall, the gate stack comprises a gate conductor (113) and a gate dielectric (114), and the gate dielectric (114) separates the gate conductor (113) from the semiconductor substrate (101).