发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS WHICH PREVENTS WAFER DECHUCK ERROR AND CONTROL METHOD THEREOF
摘要 The present invention relates to a chemical and mechanical polishing device performing a chemical and mechanical polishing process while pressing a wafer to a rotating polishing pad through a flexible membrane located on the bottom surface of a carrier head, and a method for the same. The present invention includes a chemical and mechanical polishing step performing a chemical and mechanical polishing process while the wafer is pressed on the polishing pad; a wafer attachment step for attaching the wafer to the membrane by applying an suction pressure for second apply time which is longer than that of the first apply time of the suction pressure which is introduced to attach the wafer to the membrane in the initial usage of the polishing pad after one third of the expected lifespan of the polishing pad passes, and attaching the wafer to the membrane by applying the suction pressure to the wafer, when the chemical and mechanical polishing step for the wafer completes; and a wafer dechuck step detaching a plate surface of the wafer from the polishing pad by moving a carrier head to the upper side on the polishing pad. The apply time of the suction pressure applied to the wafer is lengthen as long as a use period of the polishing pad becomes longer. Therefore, the present invention minimizes an error of the dechuck process of detaching the wafer from the polishing pad by transmitting the suction pressure to whole plate surface of the wafer and transmitting the suction pressure to the whole plate surface of the wafer.
申请公布号 KR101395553(B1) 申请公布日期 2014.05.15
申请号 KR20130042720 申请日期 2013.04.18
申请人 K.C.TECH CO., LTD. 发明人 PARK, SEONG HYEON
分类号 H01L21/304 主分类号 H01L21/304
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