| 摘要 |
PROBLEM TO BE SOLVED: To provide a stacked structure including a semiconductor layer, a tunnel barrier layer, and a magnetic layer that have low junction resistance.SOLUTION: A stacked structure includes: a semiconductor layer; a first layer formed on the semiconductor layer, including one element selected from Zr, Ti, and Hf, and having a thickness of one atomic layer or more and five atomic layers or less; a tunnel barrier layer provided on the first layer; and a magnetic layer provided on the tunnel barrier layer. |
