SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element which causes less deterioration in characteristics of a graphene and a manufacturing method of the semiconductor element.SOLUTION: A manufacturing method of a semiconductor element 15 comprises: a catalyst layer formation process of forming a catalyst layer 7 on a substrate 1; an exposure process of removing a part of the substrate 1 opposite to a part 7A of a rear face of the catalyst layer 7 to expose the part 7A of the rear face; a graphene formation process of forming a graphene 11 on the part 7A of the rear face; a transfer process of bringing the part 7A of the rear face to the substrate 1 side to transfer the graphene 11 onto the substrate 1; and a catalyst layer removal process of removing at least a part of the catalyst layer 7.