POST-DEPOSITION CLEANING METHODS AND FORMULATIONS FOR SUBSTRATES WITH CAP LAYERS

摘要

PROBLEM TO BE SOLVED: To provide methods for cleaning substrates having copper and dielectric damascene metallization, in which a corrosion-prone surface of the copper has a cap composed of cobalt, cobalt alloy, nickel, nickel alloy, or cobalt-nickel alloy film, or an electronic device surface with a nonuniform composition distribution having different corrosion rates, is cleaned while avoiding deterioration in the device surface quality and a film thickness of about 20 nm.SOLUTION: Methods for cleaning substrates comprises a step of applying a cleaning solution to a substrate to remove at least one of defects and contamination with negligible dissolution of a cap, the solution comprising one or more amines, at least one of the one or more amines providing a pH from 7 to 13 in the cleaning solution. One embodiment of the present invention is a method of fabricating an integrated circuit.