发明名称 INPUT CIRCUIT
摘要 An input circuit includes a first P-channel MOS transistor including a first terminal supplied with a high-potential power supply voltage and a second terminal coupled to a first node, a second P-channel MOS transistor including a first terminal coupled to the first node and a second terminal coupled to a second node, a first N-channel MOS transistor including a first terminal coupled to the second node and a second terminal coupled to a third node, and a second N-channel MOS transistor including a first terminal coupled to the third node and a second terminal supplied with a low-potential power supply voltage. An input signal is supplied to gate terminals of the P-channel MOS transistors and the N-channel MOS transistors. A control circuit controls the potential at the first node and the potential at the third node based on the input signal and the potential at the second node.
申请公布号 US2014132322(A1) 申请公布日期 2014.05.15
申请号 US201314075633 申请日期 2013.11.08
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 UNO OSAMU
分类号 H03K3/3565;H03K3/013 主分类号 H03K3/3565
代理机构 代理人
主权项
地址