发明名称 SEMICONDUCTOR DEVICE WITH RUTILE TITANIUM OXIDE DIELECTRIC FILM
摘要 A capacitor structure includes a first electrode on a substrate; a template layer on the first electrode; a titanium oxide (TiO2) dielectric layer on the template layer, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer. The titanium oxide dielectric layer is an undoped titanium oxide dielectric layer.
申请公布号 US2014131835(A1) 申请公布日期 2014.05.15
申请号 US201213674929 申请日期 2012.11.12
申请人 NANYA TECHNOLOGY CORP. 发明人 HSIEH CHUN-I;BHAT VISHWANATH
分类号 H01L29/92 主分类号 H01L29/92
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