发明名称 |
QUANTUM EFFICIENCY OF MULTIPLE QUANTUM WELLS |
摘要 |
Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights. |
申请公布号 |
WO2014008412(A3) |
申请公布日期 |
2014.05.15 |
申请号 |
WO2013US49347 |
申请日期 |
2013.07.03 |
申请人 |
INVENSAS CORPORATION |
发明人 |
WANG, LIANG;MOHAMMED, ILYAS;BEROZ, MASUD |
分类号 |
H01L33/06;H01L31/00;H01S5/34 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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