| 摘要 |
<p>An optoelectronic semiconductor chip (1) is specified, comprising: - a semiconductor layer sequence (2) having an active zone (4) suitable for emitting radiation, - a carrier substrate (10), and - a mirror layer (6) arranged between the semiconductor layer sequence (2) and the carrier substrate (10), wherein - the semiconductor layer sequence (2) is subdivided into a plurality of active regions (11, 12) which are arranged alongside one another and which are respectively separated from one another in the semiconductor layer sequence (2) by a trench (13), wherein each trench (13) severs both the semiconductor layer sequence (2) and the mirror layer (6), - the mirror layer (6) has side surfaces (16) facing a trench (13) and side surfaces (17) facing an outer side (15) of the semiconductor chip (1) - the side surfaces (17) of the mirror layer (17) that face an outer side (15) of the semiconductor chip (1) have a metal encapsulation layer (7) and - at least one portion of the side surfaces (16) of the mirror layer (6) that face a trench (13) has a dielectric encapsulation layer (9).</p> |
