发明名称 Improvements in the production of mono-crystalline semiconductor material
摘要 <PICT:0906485/III/1> <PICT:0906485/III/2> <PICT:0906485/III/3> <PICT:0906485/III/4> The end of a rod 1 (Fig. 1) is maintained molten by means of a double turn induction coil 4 having an aperture of smaller cross-section than rod 1 and a narrow monocrystalline rod 3 is pulled from the melt through the aperture. Rod 1, which may be of germanium or silicon, is maintained stationary and induction coil 4 is lowered during pulling. Pulling may be effected in an inert atmosphere in a quartz vessel. The pulled rod may have a diameter of down to 1 mm. Double turn coil 4 may be replaced by a single turn coil 6 (Fig. 2) attached to a silver hood 5 having a vertical slit 7. Preheating may be effected by means of a molybdenum cap 8 and induction coil 10 (Fig. 3) which are removed before crystal-pulling or by a molybdenum ring 9 and induction coil 4 (Fig. 4) which are also used during crystal-pulling.
申请公布号 GB906485(A) 申请公布日期 1962.09.19
申请号 GB19600044257 申请日期 1960.12.23
申请人 SIEMENS & HALSKE AKTIENGESELLSCHAFT 发明人
分类号 C30B15/14 主分类号 C30B15/14
代理机构 代理人
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