| 摘要 |
<p>Provided are a self-aligned metal oxide thin film transistor device and a manufacturing method therefor. The method includes: preparing a semiconductor metal oxide layer (12), a gate insulation layer (13) and a gate metal layer (14) on a substrate (11); removing a part of the gate insulation layer (13) and the gate metal layer (14); arranging an insulation film (15) outside the semiconductor metal oxide layer (12), the gate insulation layer (13) and the gate metal layer (14); removing a part of the insulation film (15), and preserving a part at least coated on the side face of the gate insulation layer (13) to form a gate spacer (151); and converting the part of the semiconductor metal oxide layer (12) which is not covered by the gate insulation layer (13) into a source conductor (121) and a drain conductor (122), so that the inner edges of the source conductor (121) and the drain conductor (122) are aligned with the outer edge of the gate metal layer (14).By means of a hydrogenation or plasma process to convert a part of the semiconductor metal oxide layer (12) into the source conductor (121) and the drain conductor (122), the contact resistance of the source conductor (121) and the drain conductor (122) is reduced; and owing to the existence of the gate spacer (151), a parasitic capacitance generated due to the overlapping of the source/drain with the gate is prevented, and the device performance is improved.</p> |
