发明名称 |
Non-Volatile memory cell, non-volatile memory device and method of programming the same |
摘要 |
A method of programming a nonvolatile memory device. The method may include pre-programming one memory cell among a plurality of memory cells by storing data in a first data storage layer using a first program voltage applied to one word line corresponding to the one memory cell among the plurality of memory cells; and while pre-programming other memory cells among the plurality of memory cells, background-programming the pre-programmed memory cell by moving the stored data to a second data storage layer using a second program voltage that is higher than the first program voltage applied to the word line of the pre-programmed memory cell. |
申请公布号 |
KR101395152(B1) |
申请公布日期 |
2014.05.15 |
申请号 |
KR20080070162 |
申请日期 |
2008.07.18 |
申请人 |
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发明人 |
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分类号 |
G11C16/10;G11C16/12;G11C16/34 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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