| 摘要 |
Provided is a plasma processing chamber including at least one process gas inlet, at least one exhaust gas outlet, a plasma generation hardware configured to generate process gas plasma at a plasma processing part of a plasma processing chamber, a wafer processing stage located in the plasma processing chamber, and a plasma monitoring probe assembly. The plasma monitoring probe assembly includes an electrical conductive probe and an insulator sleeve assembly positioned near the electrical conductive probe. The insulator sleeve assembly includes a plasma- axis sleeve part and an underground sleeve part positioned other parts on a lengthwise probe axis of the electrical conductive probe of the probe assembly. The plasma-axis sleeve part of the insulator sleeve assembly includes a material that more endures the plasma-based deterioration as compared with a material of the underground sleeve part of the insulator sleeve assembly. The underground sleeve part of the insulator sleeve assembly includes a material representing resistance stronger than that of the plasma-axis sleeve part of the insulator sleeve assembly. |
