| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing polycrystalline silicon capable of stably producing polycrystalline silicon having a density extremely close to a true density in a melting deposition process.SOLUTION: When silicon deposited on a vertical reaction tube 1 is melted and dropt so as to be recovered in a receiving vessel 8 installed in the directly lower part of the vertical reaction tube, in a meanwhile in which the recovered silicon is present in a melted state in the receiving vessel, the ratio of an inert gas hard to be solved to the molten silicon is controlled to 50 vol.% or higher. |
