| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor memory by applying a voltage stress between bit lines adjacent to each other in a sense amplifier region.SOLUTION: The semiconductor memory comprises: a first cell array including a plurality of first bit lines; a second cell array including a plurality of second bit lines; a plurality of first sense amplifiers and a plurality of second sense amplifiers arranged in parallel between the first and second cell arrays; a plurality of first precharge circuits each connecting the first and second bit lines connected to the first sense amplifier with a first precharge voltage line; a plurality of second precharge circuits each connecting the first and second bit lines connected to the second sense amplifier with a second precharge voltage line; and a voltage supply section that, in a test mode, supplies one of a high-level voltage or a low-level voltage to the first precharge voltage line, and supplies the other of the high-level voltage or the low-level voltage to the second precharge voltage line. |
