| 摘要 |
Embodiments of the invention generally relate to interposers for packaging integrated circuits. The interposers include capacitive devices for reducing signal noise and leakage between adjacent integrated circuits coupled to the interposers. The capacitive devices are formed from doped semiconductor layers. In one embodiment, an interposer includes a substrate having doped regions of opposing conductivities. First and second oxide layers are disposed over the doped regions. A first interconnect disposed in the second oxide layer is electrically coupled to a doped region of a first conductivity, and a second interconnect disposed in the second oxide is electrically coupled to a doped region of a second conductivity. Additional capacitive devices utilizing doped semiconductor layers are also disclosed. |
