| 摘要 |
A TFT array substrate includes: a pixel electrode, which is arranged in a pixel region formed in a matrix shape by a gate wiring and a source wiring on an insulating substrate; a switching element, which is disposed at an intersection of the gate wiring and the source wiring; a counter electrode, which is formed on the pixel electrode with interposing an insulating film; and a silicon film is formed on a lower layer so as to face the source wiring, wherein the source wiring and the pixel electrode are formed on the same layer by a transparent conductive material, and wherein the source wiring and the silicon film are formed so that end faces of the source wiring and the silicon film are overlapped and a width of the source wiring is identical to a width of the silicon film, in a plan view. |
