| 摘要 |
Provide is an etching completion detection method that accurately detects an etching completion position in an SOI substrate, regardless of the width of an opening. This etching completion detection method is a method for detecting etching completion when a silicon layer is being etched to form an opening that reaches an insulating layer in an SOI substrate in which the silicon layer is disposed on the insulating layer, the method including: forming a first electrode layer on a surface of an islet region that is surrounded by a loop-shaped opening to be formed by the etching, and a second electrode layer in a region outside the stripe region; measuring an electrical resistance between the first electrode layer and the second electrode layer; and determining that the loop-shaped opening has reached an etching completion position when the electrical resistance exceeds a preset threshold. |
