| 摘要 |
A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum. |
